ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,356, issued on Oct. 27, was assigned to Imec vzw (Leuven, Belgium) and Katholieke Universiteit Leuven (Leuven, Belgium). "VCMA MRAM device"... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,357, issued on Oct. 27, was assigned to SONY SEMICONDUCTOR SOLUTIONS Corp. (Tokyo). "Magnetoresistive effect memory" was invented by Lui Sa... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,358, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho). "Differential amplifier offset in memory" was invented by Ya... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,359, issued on Oct. 27, was assigned to QUALCOMM Inc. (San Diego). "Multi bank refresh in volatile memory systems" was invented by Saurabh ... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,360, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho). "Two-stage voltage calibration upon power-up of memory devic... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,361, issued on Oct. 27. "Interrupt-driven content protection of a memory device" was invented by Gil Golov (Backnang, Germany). According ... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,362, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho). "Semiconductor memory device with per-channel alert of row h... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,363, issued on Oct. 27, was assigned to UIF (University Industry Foundation), Yonsei University (Seoul, South Korea). "Input offset detecti... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,364, issued on Oct. 27, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Write clock bias generator configured to com... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,365, issued on Oct. 27, was assigned to ARM Ltd. (Cambridge, Great Britain). "Increased throughput for reads in static random access memory... Read More